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TRUESEMI/Xin'an Field Effect Transistor MOSFET TSF10N65M TO-220F 10A, 650V, 1 Ω
$0.14 / individual
Reference Price1individual (Min. Order)
Ship From
Shenzhen, Guangdong
Shipping
To be negotiated with the supplier
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Key Attributes
Details
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Brand
TRUESEMI/Xin'an
Model number
TSF10N65M
Leakage source voltage (Vdss)
650V
Customer Service Hotline
18126259401
encapsulation
TO-220F
Batch number
22+
quantity
2000
FET type
N-channel MOSFET
Gate source voltage (Vgs)
±30V
Drain current (Id)
10A
Leakage source conduction resistance (RDSOn)
0.85Ω
Gate charge (Qg)
48nC
Reverse recovery time
430ns
Maximum dissipated power
52W
Configuration Type
single
Working temperature range
-55to+150℃
Installation Type
through hole
Conductive method
Enhanced
Application Fields
Household appliances, 3C digital, smart homes, etc
Comprehensive parameters
10A,650V,1Ω
Details
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