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TRUESEMI/Xin'an Field Effect Transistor MOSFET TSA9N90M TO-3P 9A, 900V, 1.4 Ω
$0.14 / individual
Reference Price1individual (Min. Order)
Ship From
Shenzhen, Guangdong
Shipping
To be negotiated with the supplier
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Key Attributes
Details
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Brand
TRUESEMI/Xin'an
Model number
TSA9N90M
Leakage source voltage (Vdss)
900V
Customer Service Hotline
18126259401
encapsulation
TO-3P
Batch number
22+
quantity
1800
FET type
N-channel MOSFET
Gate source voltage (Vgs)
±30V
Drain current (Id)
9A
Leakage source conduction resistance (RDSOn)
1.12
Gate charge (Qg)
52nC
Reverse recovery time
550ns
Maximum dissipated power
130W
Configuration Type
single
Working temperature range
-55to+150℃
Installation Type
through hole
Conductive method
Enhanced
Application
Switching Power Supply
Application Fields
Household appliances, 3C digital, smart homes, etc
Comprehensive parameters
9A,900V,1.4Ω
Details
Price Disclaimer
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