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TRUESEMI/Xin'an Field Effect Transistor MOSFET TSI5N65M TO-262 4.5A, 650V, 3 Ω
$0.14 / individual
Reference Price1individual (Min. Order)
Ship From
Shenzhen, Guangdong
Shipping
To be negotiated with the supplier
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Key Attributes
Details
Price Disclaimer
Brand
TRUESEMI/Xin'an
Customer Service Hotline
18126259401
Model number
TSI5N65M
encapsulation
TO-262
Batch number
20+
quantity
450
FET type
N-channel MOSFET
Leakage source voltage (Vdss)
650V
Gate source voltage (Vgs)
±30V
Drain current (Id)
4.5A
Leakage source conduction resistance (RDSOn)
1.5Ω
Configuration Type
single
Working temperature range
-55to+150℃
Installation Type
through hole
Conductive method
Enhanced
Application Fields
Household appliances, 3C digital, smart homes, etc
Comprehensive parameters
4.5A,650V,3Ω
Details
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