High-Performance N-Channel Mosfet for Superior Efficiency: IPT60R075CFD7XTMA1 Infineon Technologies

Infineon Technologies has always been at the forefront of developing high-performance and efficient power management solutions. The IPT60R075CFD7XTMA1 is one such product that has been designed to meet the demands of the modern world. This N-Channel Mosfet is part of the Coolmos™ Cfd7 series and is renowned for its exceptional performance and efficiency.

The IPT60R075CFD7XTMA1 is a surface mountable Mosfet that has been designed for use in a wide range of applications. With a drain to source voltage of 600V and a continuous drain current of 33A at 25°C, this Mosfet is ideal for use in high-power applications. Its low Rds on value of 75mohm at 11.4A and 10V ensures minimal power loss and superior efficiency, making it an excellent choice for high-frequency switching applications.

The IPT60R075CFD7XTMA1 has a high gate charge of 51 Nc at 10V, making it suitable for use in high-speed switching applications. Its low input capacitance of 2103 Pf at 400V ensures fast switching speeds and reduced power loss, making it an ideal choice for applications that require high efficiency and reliability.

This Mosfet has a maximum gate voltage of ±20V and a maximum operating temperature of -55°C to 150°C. It has been designed to operate in extreme temperature conditions, making it a robust and reliable solution for your needs.

In conclusion, the IPT60R075CFD7XTMA1 is an excellent choice for anyone looking for a high-performance and efficient N-Channel Mosfet. Its low Rds on value, high gate charge, and low input capacitance make it an excellent choice for high-frequency switching applications. Its robust design and ability to operate in extreme temperature conditions make it a reliable solution for your needs. So, if you're looking for a Mosfet that offers superior efficiency and performance, the IPT60R075CFD7XTMA1 is the perfect choice for you.