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IXFN40N110Q3 Aises IXYS power electronic module MOS tube SOT-227 package
$19.29 ~ 25.71
Reference Price1individual (Min. Order)
MOS transistor SOT-227 package
IXFN40N110Q3
Negotiable
Ship From
Suzhou, Jiangsu
Shipping
To be negotiated with the supplier
Customization
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Key Attributes
Details
Price Disclaimer
Brand
IXYS
Model number
IXFN40N110Q3
type
2 P channels
Leakage source voltage (Vdss)
1100V
Continuous drain current (Id)
520
Power (Pd)
208
On-resistance
250
Gate charge( Qg@Vgs )
30
Reverse transmission capacitor( Crss@Vds )
0.3pF@50V
Operating temperature
-55°C~150°C(TJ)
Packaging/Specifications
TO-263-3
packaging
boxed
Minimum packaging quantity
1
encapsulation
Standard Packaging
Batch number
21+
quantity
300
Category
Discrete semiconductor products - Transistor FET, MOSFET-
manufacturer
IXYS
series
HiPerFET™,Q3Class
FET type
N channels
Vgs (maximum value)
±30V
Power dissipation (maximum value)
960W(Tc)
Installation Type
Base installation
Encapsulation
SOT-227-4,miniBLOC
Details
Price Disclaimer
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