ITO target material indium tin oxide 90:10 magnetron sputtering electron beam ceramic semiconductor high-purity 4N research experiment

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ITO target material indium tin oxide 90:10 magnetron sputtering electron beam ceramic semiconductor high-purity 4N research experiment

$174.57 ~ 222.14

Reference Price

1piece (Min. Order)

Indium tin oxide target material

Negotiable

Ship From

Beijing, Beijing

Shipping

To be negotiated with the supplier

Customization

For customization requests, please

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Brand

Dingze

Does it support customized processing

Yes

Specific gravity

90:10

Wall thickness

Standard bundle weight

0.1kg

Material

ito

Size

9cm

modulus of elasticity

1..63

thermal conductivity

1.2

Voltage

320V

Specification

96mm

thickness

3mm

tensile strength

13MPa

yield strength

12MPa

Elongation

Operating temperature

1200℃

Scope of application

semiconductor

Main metal content

99.999%

Details

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