Shenzhen Jiadayuan Electronics Co., Ltd
OS 3

Brand new original IPP110N20N3G TO-220 200V88A high-power MOS transistor

$3.14 ~ 3.57
Reference Price
1individual (Min. Order)
Ship From
Shenzhen, Guangdong
Shipping
To be negotiated with the supplier
Customization
For customization requests, please
Brand
Jiadayuan
Model number
IPP110N20N3G
encapsulation
TO220
Drain current (Id)
25A
Leakage source voltage (Vdss)
250V
Maximum dissipated power
136W(mW)
Leakage source conduction resistance (RDSOn)
60mOhms
Installation Type
Surface mount type
Working temperature range
-55°C~175°C
Application Fields
household appliances
FET type
N channels
Collector emitter breakdown voltage (VCEO)
original equipment manufacturer (OEM)
Batch number
New Year's Edition
quantity
1
Details








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