Overview
| brand | Vishay | model | SQ2309ES-T1_ GE3 |
| type | Leakage source voltage (Vdss) | ||
| Continuous drain current (Id) | Power (Pd) | ||
| Conduction resistance | Threshold voltage (Vgs (th) @ Id) | ||
| Gate charge（ Qg@Vgs ） | Input capacitance（ Ciss@Vds ） | ||
| Reverse transmission capacitor（ Crss@Vds ） | working temperature | ||
| Packaging/Specifications | packing | ||
| Certification Authority | Minimum packaging quantity | ||
| quantity | thirty thousand | manufacturer | Vishay |
| Product category | MOSFET | RoHS | yes |
| Installation style | SMD/SMT | Packaging/Box | SOT-23-3 |
| Transistor polarity | P-Channel | Number of channels | 1 Channel |
| Vds - drain source breakdown voltage | 60 V | Id - Continuous drain current | 1.7 A |
| Rds On - Leakage Source Conduction Resistance | 268 mOhms | Vgs - gate source voltage | -20 V,+20 V |
| Vgs th gate source threshold voltage | 2.5 V | Qg gate charge | 8.5 nC |
| Minimum operating temperature | -55 C | Maximum operating temperature | +175 C |
| Pd - Power dissipation | 2 W | Channel mode | Enhancement |
| qualification | AEC-Q101 | allocation | Single |
| Descending time | 9 ns | rise time | 9 ns |
| series | SQ | Transistor type | 12 ns |
| Typical shutdown delay time | 5 ns | Typical connection delay time | SQ2309ES-T1_ BE3 |
Product Details
Trading Area
Global