Overview
| brand | Onsemi | model | NTHD3100CT1G |
| quantity | twelve thousand | manufacturer | ON Semiconductor |
| Product category | MOSFET | RoHS | yes |
| technology | Si | Installation style | SMD/SMT |
| Packaging/Box | ChipFET-8 | Number of channels | 2 Channels |
| Transistor polarity | N-Channel, P-Channel | Vds - drain source breakdown voltage | 20 V |
| Id - Continuous drain current | 3.9 A, 3.2 A | Rds On - Leakage Source Conduction Resistance | 80 mOhms, 110 mOhms |
| Vgs - gate source voltage | 4.5 V, -2.5 V | Vgs th gate source threshold voltage | 600 mV, 450 mV |
| Qg gate charge | 2.3 nC, 7.4 nC | Minimum operating temperature | -55 C |
| Maximum operating temperature | +150 C | Pd - Power dissipation | 3.1 W |
| allocation | Dual | Channel mode | Enhancement |
| encapsulation | Cut Tape | height | 1.05 mm |
| length | 3.05 mm | product | MOSFET Small Signal |
| series | NTHD3100C | Transistor type | 1 N-Channel, 1 P-Channel |
| type | MOSFET | width | 1.65 mm |
| trademark | ON Semiconductor | Forward transconductance - minimum value | 6 S, 8 S |
| Descending time | 1.5 ns, 12.4 ns | product type | MOSFET |
| rise time | 10.7 ns, 11.7 ns | Factory packaging quantity | three thousand |
| Subcategory | MOSFETs | Typical shutdown delay time | 9.6 ns, 16 ns |
| Typical connection delay time | 6.3 ns, 5.8 ns | Unit weight | 85 mg |
Product Details
technical parameter
| Brand: | Onsemi |
| Model: | NTHD3100CT1G |
| Quantity: | twelve thousand |
| Manufacturer: | ON Semiconductor |
| Product type: | MOSFET |
| RoHS: | yes |
| Technology: | Si |
| Installation style: | SMD/SMT |
| Packaging/Box: | ChipFET-8 |
| Number of channels: | 2 Channels |
| Transistor polarity: | N-Channel, P-Channel |
| Vds drain source breakdown voltage: | 20 V |
| Id - Continuous drain current: | 3.9 A, 3.2 A |
| Rds On Leakage Source Conduction Resistance: | 80 mOhms, 110 mOhms |
| Vgs gate source voltage: | 4.5 V, -2.5 V |
| Vgs th gate source threshold voltage: | 600 mV, 450 mV |
| Qg gate charge: | 2.3 nC, 7.4 nC |
| Minimum operating temperature: | -55 C |
| Maximum operating temperature: | +150 C |
| Pd - Power dissipation: | 3.1 W |
| Configuration: | Dual |
| Channel mode: | Enhancement |
| Packaging: | Cut Tape |
| Height: | 1.05 mm |
| Length: | 3.05 mm |
| Product: | MOSFET Small Signal |
| Series: | NTHD3100C |
| Transistor type: | 1 N-Channel, 1 P-Channel |
| Type: | MOSFET |
| Width: | 1.65 mm |
| Trademark: | ON Semiconductor |
| Forward transconductance - minimum value: | 6 S, 8 S |
| Descending time: | 1.5 ns, 12.4 ns |
| Product Type: | MOSFET |
| Rise time: | 10.7 ns, 11.7 ns |
| Factory packaging quantity: | three thousand |
| Subcategory: | MOSFETs |
| Typical shutdown delay time: | 9.6 ns, 16 ns |
| Typical connection delay time: | 6.3 ns, 5.8 ns |
| Unit weight: | 85 mg |
Trading Area
Global