Overview
| brand | Onsemi | model | NTTFS5820NLTAG |
| type | Leakage source voltage (Vdss) | ||
| Continuous drain current (Id) | Power (Pd) | ||
| Conduction resistance | Threshold voltage (Vgs (th) @ Id) | ||
| Gate charge（ Qg@Vgs ） | Input capacitance（ Ciss@Vds ） | ||
| Reverse transmission capacitor（ Crss@Vds ） | working temperature | ||
| Packaging/Specifications | packing | ||
| Certification Authority | Minimum packaging quantity | ||
| quantity | one thousand and five hundred | manufacturer | ON Semiconductor |
| Product category | MOSFET | RoHS | yes |
| Installation style | SMD/SMT | Packaging/Box | WDFN-8 |
| Number of channels | 1 Channel | Transistor polarity | N-Channel |
| Vds - drain source breakdown voltage | 60 V | Id - Continuous drain current | 37 A |
| Rds On - Leakage Source Conduction Resistance | 11.5 mOhms | Vgs - gate source voltage | 10 V |
| Vgs th gate source threshold voltage | 1.5 V | Qg gate charge | 28 nC |
| Minimum operating temperature | -55 C | Maximum operating temperature | +150 C |
| Pd - Power dissipation | 33 W | allocation | Single |
| Channel mode | Enhancement | series | NTTFS5820NL |
| Transistor type | 1 N-Channel | Forward transconductance - minimum value | 24.6 S |
| Descending time | 22 ns | rise time | 28 ns |
| Typical shutdown delay time | 19 ns | Typical connection delay time | 10 ns |
| Unit weight | 75 mg | ||
Product Details
Trading Area
Global