Overview
| brand | FAIRCHILD/Fairy Boy | model | FDG6335N |
| quantity | two hundred and sixty | manufacturer | ON Semiconductor |
| Product category | MOSFET | RoHS | yes |
| technology | Si | Installation style | SMD/SMT |
| Packaging/Box | SOT-323-6 | Transistor polarity | N-Channel |
| Number of channels | 2 Channels | Vds - drain source breakdown voltage | 20 V |
| Id - Continuous drain current | 700 mA | Rds On - Leakage Source Conduction Resistance | 300 mOhms |
| Vgs - gate source voltage | -12 V,+12 V | Vgs th gate source threshold voltage | 600 mV |
| Qg gate charge | 1.4 nC | Minimum operating temperature | -55 C |
| Maximum operating temperature | +150 C | Pd - Power dissipation | 300 mW |
| Channel mode | Enhancement | Trade name | PowerTrench |
| encapsulation | Cut Tape | allocation | Dual |
| height | 1.1 mm | length | 2 mm |
| product | MOSFET Small Signal | series | FDG6335N |
| Transistor type | 2 N-Channel | type | MOSFET |
| width | 1.25 mm | trademark | ON Semiconductor/Fairchild |
| Forward transconductance - minimum value | 2.8 S | Descending time | 7 ns |
| product type | MOSFET | rise time | 7 ns |
| Factory packaging quantity | three thousand | Subcategory | MOSFETs |
| Typical shutdown delay time | 9 ns | Typical connection delay time | 5 ns |
| Unit weight | 28 mg | ||
Product Details
technical parameter
| Brand: | FAIRCHILD/Fairy Boy |
| Model: | FDG6335N |
| Quantity: | two hundred and sixty |
| Manufacturer: | ON Semiconductor |
| Product type: | MOSFET |
| RoHS: | yes |
| Technology: | Si |
| Installation style: | SMD/SMT |
| Packaging/Box: | SOT-323-6 |
| Transistor polarity: | N-Channel |
| Number of channels: | 2 Channels |
| Vds drain source breakdown voltage: | 20 V |
| Id - Continuous drain current: | 700 mA |
| Rds On Leakage Source Conduction Resistance: | 300 mOhms |
| Vgs gate source voltage: | -12 V,+12 V |
| Vgs th gate source threshold voltage: | 600 mV |
| Qg gate charge: | 1.4 nC |
| Minimum operating temperature: | -55 C |
| Maximum operating temperature: | +150 C |
| Pd - Power dissipation: | 300 mW |
| Channel mode: | Enhancement |
| Trademark name: | PowerTrench |
| Packaging: | Cut Tape |
| Configuration: | Dual |
| Height: | 1.1 mm |
| Length: | 2 mm |
| Product: | MOSFET Small Signal |
| Series: | FDG6335N |
| Transistor type: | 2 N-Channel |
| Type: | MOSFET |
| Width: | 1.25 mm |
| Trademark: | ON Semiconductor/Fairchild |
| Forward transconductance - minimum value: | 2.8 S |
| Descending time: | 7 ns |
| Product Type: | MOSFET |
| Rise time: | 7 ns |
| Factory packaging quantity: | three thousand |
| Subcategory: | MOSFETs |
| Typical shutdown delay time: | 9 ns |
| Typical connection delay time: | 5 ns |
| Unit weight: | 28 mg |
Trading Area
Global