NVMFD5C650NLWFT1G electronic components onsemi

brand	Onsemi	model	NVMFD5C650NLWFT1G
quantity	ten thousand	manufacturer	ON Semiconductor
Product types	MOSFET	RoHS	yes
technology	Si	Installation style	SMD/SMT
Packaging/Box	DFN-8	Transistor polarity	N-Channel
Number of channels	2 Channels	Vds - drain source breakdown voltage	60 V
Id - Continuous drain current	111 A	Rds On - Leakage source conduction resistance	3.5 mOhms, 3.5 mOhms
Vgs gate source voltage	-20 V,+20 V	Vgs th gate source threshold voltage	1.2 V
Qg - gate charge	37 nC	Minimum operating temperature	-55 C
Maximum operating temperature	+175 C	Pd - Power dissipation	125 W
Channel mode	Enhancement	qualification	AEC-Q101
encapsulation	Cut Tape	allocation	Dual
series	NVMFD5C650NL	Transistor type	2 N-Channel
trademark	ON Semiconductor	Forward transconductance - minimum value	120 S, 120 S
Descent time	13 ns, 13 ns	product type	MOSFET
rise time	24 ns, 24 ns	Factory packaging quantity	one thousand and five hundred
Subcategories	MOSFETs	Typical shutdown delay time	37 ns, 37 ns
Typical connection delay time	13 ns, 13 ns	Unit weight	223.650 mg